Observation of phase separation in (Ge2)x(GaAs)1−x alloys grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference11 articles.
1. Preparation of nonequilibrium solid solutions of (GaAs)1−xSix
2. Growth and optical properties of single-crystal metastable (GaAs)1−xGex alloys
3. Growth of single‐crystal metastable semiconducting (GaSb)1−xGexfilms
4. Summary Abstract: Ion mixing during film deposition: Growth of metastable semiconducting and metallic alloys
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of sample size on simulations and measurements of the phase transition in(GaAs)1−xGe2xand related alloys;Physical Review B;2002-08-06
2. Ge-related faceting and segregation during the growth of metastable (GaAs)1−x(Ge2)x alloy layers by metal–organic vapor-phase epitaxy;Applied Physics Letters;1999-03-08
3. Growth of (GaAs)1_x(Ge2)x by metalorganic chemical vapor deposition;Journal of Electronic Materials;1994-02
4. Summary Abstract: Properties of (Ge2)x(GaAs)1−x alloys grown by molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1985-03
5. Properties of (Ge2)x(GaAs)1−xalloys grown by molecular beam epitaxy;Applied Physics Letters;1985-03
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