High-resolution electron microscopy of structural features at the interface-Reference-Cited by-同舟云学术

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High-resolution electron microscopy of structural features at the interface

Published:1987-02 Issue:3 Volume:5 Page:94-98
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Carim A.H.,Sinclair R.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference11 articles.

1. Si/SiO2interface roughness: Structural observations and electrical consequences

2. The preparation of cross-section specimens for transmission electron microscopy

3. Experimental high-resolution electron microscopy;Spence,1981

4. A.H. Carim and R. Sinclair, J. Electrochem. Soc., tobe published.

5. Semiconductor silicon 1986;Carim,1986

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Silicon Dioxide, Nitride, and Oxynitride;Encyclopedia of Materials: Science and Technology;2003

2. Ellipsometric examination of optical property of the Si–SiO2 interface using the s-wave antireflection;Journal of Applied Physics;1999-01-15

3. Si/SiO2 interface studies by spectroscopic immersion ellipsometry and atomic force microscopy;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1994-09

4. A New Portrayal of Oxidation of Undoped Polycrystalline Silicon Films in a Short Duration;Japanese Journal of Applied Physics;1994-01-30

5. Si/SiO2 Interface Studies by Immersion Ellipsometry;MRS Proceedings;1993-01

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