Cathodoluminescence study of h– and c–GaN single crystals grown by a Na or K flux
Author:
Affiliation:
1. Nanomaterials Laboratory, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, 305-0047, Japan
2. Institute for Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira,Sendai, 980-8577, Japan
Publisher
Informa UK Limited
Subject
General Materials Science
Link
https://www.tandfonline.com/doi/pdf/10.1016/S1468-6996%2802%2900003-7
Reference20 articles.
1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
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3. Group III nitride semiconductors for short wavelength light-emitting devices
4. Growth of single crystal GaN substrate using hydride vapor phase epitaxy
5. Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer
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1. Photoluminescence of Flux Grown GaN Crystals;Journal of Nanoelectronics and Optoelectronics;2013-03-01
2. Cathodoluminescence study of nonuniformity in hydride vapor phase epitaxy-grown thick GaN films;Journal of Electron Microscopy;2011-12-08
3. Synthesis of high-crystallinity cubic-GaN nanoparticles using the Na flux method—A proposed new usage for a belt-type high-pressure apparatus;Journal of Crystal Growth;2011-04
4. Growth and Characteristics of Zinc-Blende and Wurtzite GaN Junctioned Branch Nanostructures;Crystal Growth & Design;2010-05-06
5. A Brief Review on the Na-Flux Method Toward Growth of Large-Size GaN Crystal;Technology of Gallium Nitride Crystal Growth;2010
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