Room temperature polarized photoreflectance and photoluminescence characterization of AlGaAs/InGaAs/GaAs high electron mobility transistor structures-Reference-Cited by-同舟云学术

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Room temperature polarized photoreflectance and photoluminescence characterization of AlGaAs/InGaAs/GaAs high electron mobility transistor structures

Published:2000-12 Issue:4 Volume:8 Page:297-305
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Chen T.H.,Huang Y.S.,Shou T.S.,Tiong K.K.,Lin D.Y.,Pollak F.H.,Goorsky M.S.,Streit D.C.,Wojtowicz M.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Overview of recent development of HEMTs in the mm-wave range

2. Improved source resistance in InP-based enhancement-mode HEMTs for high speed digital applications

3. Role of misfit dislocations on pseudomorphic high electron mobility transistors

4. Influence of quantum-well width on device performance of Al/sub 0.30/Ga/sub 0.70/As/In/sub 0.25/Ga/sub 0.75/As (on GaAs) MODFETs

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of the spacer growth temperature on the electrophysical and structural properties of PHEMTs;Technical Physics;2007-04

2. Modeling photoreflectance of quantum well heterostructures: A comprehensive approach;Journal of Applied Physics;2007-02

3. The effect of spacer-layer growth temperature on mobility in a two-dimensional electron gas in PHEMT structures;Semiconductors;2006-12

4. Electrical behavior of modulation-and delta-doped Al x Ga1 − x As/In y Ga1 − y As/GaAs PHEMT structures;Russian Microelectronics;2006-03

5. Annealing effect on the optical properties in Si delta-doped Al0.24Ga0.76As/In0.15Ga0.85As/GaAs pseudomorphic high electron mobility transistor structures;Physica E: Low-dimensional Systems and Nanostructures;2003-09

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