Heteroepitaxial PbTe-on-Si pn-junction IR-sensors: correlations between material and device properties
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Infrared sensor arrays with 3-12 mu m cutoff wavelengths in heteroepitaxial narrow-gap semiconductors on silicon substrates
2. G. Springholz, Z. Shi, H. Zogg, in: W.K. Liu, M.B. Santos, (Eds.), Heteroepitaxy: Thin Film Systems, World Scientific Publishing, Singapore, pp. 621–688, 1999 (Chapter 14).
3. Thermal-mismatch-strain relaxation in epitaxialCaF2,BaF2/CaF2, and PbSe/BaF2/CaF2layers on Si(111) after many temperature cycles
4. Reduction of Threading Dislocation Densities in Heavily Lattice Mismatched PbSe on Si(111) by Glide
5. Monolithic heteroepitaxial PbTe-on-Si infrared focal plane array with 96/spl times/128 pixels
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