Molecular Beam Epitaxy of Narrowgap IV-VI Semiconductors-Reference-Cited by-同舟云学术

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Molecular Beam Epitaxy of Narrowgap IV-VI Semiconductors

Published:1999-06 Issue: Volume: Page:621-688
ISSN:1793-1444
Container-title:Thin Films: Heteroepitaxial Systems
language:
Short-container-title:

Author:

SPRINGHOLZ Gunther¹,SHI Z.²,ZOGG Hans³

Affiliation:

1. Institut für Halbleiterphysik, Johannes Kepler Universität, Linz, Austria

2. School of Electrical Engineering, University of Oklahoma, Norman, Oklahoma 73019, U.S.A.

3. Institute of Quantum Electronics, Swiss Federal Institute of Technology, Zürich, Switzerland

Publisher

WORLD SCIENTIFIC

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial growth of diluted magnetic semiconductor Ge1−xCrxTe with high Cr composition;Applied Physics Letters;2016-05-30

2. 9.4.1 Growth and material systems;Growth and Structuring;2013

3. 9.3.1 Molecular beam epitaxy;Growth and Structuring;2013

4. 9.2 Band-gap engineering by alloying;Growth and Structuring;2013

5. 9.1 IV-VI semiconductors: General properties;Growth and Structuring;2013

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