Growth of the BaF2/CaF2/A12O3 Structures for the Radiation-Resistant Photodetectors for Infrared Range

Author:

Velichko Alexander A.1,Filimonova Nina I.1,Rudenko Igor E.1,Ilyushin Vladimir A.1

Affiliation:

1. Novosibirsk State Technical University,Faculty of Radio Engineering and Electronics,Novosibirsk,Russia

Publisher

IEEE

Reference16 articles.

1. Influence of growth conditions on surface morphology, structural and optical properties of PbSnTe/BaF2/CaF2/Si(100) heteroepitaxial structures;ostertak;Annual Meeting of the DPG and DPG Spring Meeting of the Condensed Matter Division - Berlin Technische Universitat Berlin,0

2. Modification of the Surface Properties of PbSnTe〈In〉 Epitaxial Layers with Composition near Band Inversion

3. Structural characterization of a short-period superlattice based on the CdF2/CaF2/Si(111) heterostructure by transmission electron microscopy and X-ray diffractometry [Strukturnaya harakterizaciya korotkoperiodnoj sverhreshetki na osnove geterostruktury cdf2/caf2/si(111) metodami prosvechivayushchej elektronnoj mikroskopii i rentgenovskoj difraktometrii];sorokin;(in Russia) Letters to the journal of technical physics [Pisma v zhurnal tekhnicheskoj fiziki],2021

4. Study of the structural quality of heteroepitaxial silicon-on-sapphire structures by high-resolution X-ray diffraction, X-ray reflectivity, and electron microscopy

5. Growth Kinetics and Microstructure of PbTe Films Produced on Si and BaF2 Substrates by a Modified Hot-Wall Method

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