Electron transport and optical properties of InGaAs quantum wells with quasi-periodic (L0∼30 nm) interface corrugation grown on vicinal (1 1 1)B GaAs
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. Interface roughness scattering in GaAs/AlAs quantum wells
2. Large conductance anisotropy in a novel two‐dimensional electron system grown on vicinal (111)B GaAs with multiatomic steps
3. Formation of multi-atomic steps and novel heterojunctions on vicinal (1 1 1)B substrates by MBE and anisotropic transport of 2D electrons
4. Anisotropic mobilities of low-dimensional electrons at stepped n-AlGaAs/GaAs interfaces with 15 nm periodicity on vicinal (111)B substrates
5. Formation and characterization of modulated two-dimensional electron gas on GaAs multiatomic steps grown by metalorganic vapor phase epitaxy
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effects of applied magnetic field on the infrared transitions between hydrogenic states in a corrugated quantum well;The European Physical Journal B;2010-01-21
2. The effect of nonparabolicity on binding energy of ground and excited states in a corrugated quantum well;Superlattices and Microstructures;2009-10
3. MBE growth of self-assembled InGaAs quantum dots aligned along quasi-periodic multi-atomic steps on a vicinal (111)B GaAs surface;Journal of Crystal Growth;2007-04
4. Formation of self-assembled InGaAs quantum dot arrays aligned along quasiperiodic multiatomic steps on vicinal (111)B GaAs;Applied Physics Letters;2006-10-30
5. STEM studies of MBE-grown corrugated structures of GaAs, InGaAs and AlAs on (757)B substrates;Journal of Crystal Growth;2005-05
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