MBE growth of self-assembled InGaAs quantum dots aligned along quasi-periodic multi-atomic steps on a vicinal (111)B GaAs surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Progress and prospects of advanced quantum nanostructures and roles of molecular beam epitaxy
2. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
3. InAs quantum dots onGaAs(2¯5¯11¯)B: STM and photoluminescence studies
4. Reflection high-energy electron diffraction/scanning tunneling microscopy study of InAs growth on the three low index orientations of GaAs: Two-dimensional versus three-dimensional growth and strain relaxation
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Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Raman scattering study on Sb spray InAs/GaAs quantum dot nanostructure systems;Nanoscale Research Letters;2015-04-29
2. An atomic scale study on the effect of Sb during capping of MBE grown III–V semiconductor QDs;Semiconductor Science and Technology;2011-04-08
3. Effect of In[sub x]Ga[sub 1−X]As Underlying Layer and Growth Mode on the Surface Morphology of In[sub 0.5]Ga[sub 0.5]As∕GaAs Quantum Dots;AIP Conference Proceedings;2010
4. Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer;Physical Review B;2009-10-28
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