Defects in a-Si:H films produced by remote plasma enhanced chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. G.N. Parsons, D.V. Tsu and G. Lucovsky, in: proc. 1988 AVS National Symposium, J. Vac. Sci. Technol. A, to be published.
2. D.V. Tsu, G.N. Parsons, and G. LUcobsky, ibid., ref. 1.
3. Local atomic structure in thin films of silicon nitride and silicon diimide produced by remote plasma-enhanced chemical-vapor deposition
4. Deposition of silicon oxynitride thin films by remote plasma enhanced chemical vapor deposition
5. Optical and electrical properties of a-Si:H films grown by remote plasma enhanced chemical vapor deposition (RPECVD)
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Annealing of “intrinsic” and photo-induced defects in hydrogenated amorphous silicon;Thin Solid Films;1990-12
2. Post‐deposition relaxation of electronic defects in hydrogenated amorphous silicon;Applied Physics Letters;1990-05-07
3. Reduction of defects by high temperature annealing (150°C–240°C) in hydrogenated amorphous silicon films deposited at room temperature;Journal of Non-Crystalline Solids;1989-12
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