Post‐deposition relaxation of electronic defects in hydrogenated amorphous silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103056
Reference13 articles.
1. Glow-discharge amorphous silicon: Growth process and structure
2. Defects in plasma-deposited a-Si: H
3. Preparation of highly photoconductive amorphous silicon by rf sputtering
4. Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering
5. Optical and electrical properties of a-Si:H films grown by remote plasma enhanced chemical vapor deposition (RPECVD)
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1. Remote plasma-processing (RPP), medium range order, and precursor sites for dangling bond defects in “amorphous-Si(H)” alloys: Photovoltaic and thin film transistor devices;Surface and Coatings Technology;2014-03
2. In situ Photocurrent Measurements of Thin-Film Semiconductors during Plasma-Enhanced Chemical Vapor Deposition;Applied Physics Express;2013-12-01
3. Spectroscopic Detection of Medium Range Order in Device Grade Hydrogenated Amorphous Silicon;Japanese Journal of Applied Physics;2013-04-01
4. Spectroscopic Detection of Medium Range Order in Hydrogenated Amorphous Silicon, a-Si(H): Applications in Photovolatics, Thin Film Transistors and Si-based Microelectronics;Physics Procedia;2013
5. Kinetics ofa-Si:H bulk defect anda-Si:H/c-Si interface-state reduction;Physical Review B;2012-03-19
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