Lifetime distribution of photoluminescence in a-Si:H based alloys
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Luminescence and recombination in hydrogenated amorphous silicon
2. Electronic transport and recombination in amorphous semiconductors at low temperatures
3. Frequency-resolved spectroscopy and its application to lifetime studies in a-Si:H
4. Discontinuous change of photoluminescence lifetime with temperature in hydrogenated amorphous silicon
5. Structural order and dynamics of amorphous Si and Ge
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Two characteristic photoluminescence states and their metastability in hydrogenated amorphous silicon and its alloys;Journal of Applied Physics;2007-03
2. Two characteristic photoluminescence states in a-Si:H and its alloys;Journal of Non-Crystalline Solids;2006-06
3. Physical understanding and technological control of carrier lifetimes in semiconductor materials and devices: A critique of conceptual development, state of the art and applications;Progress in Quantum Electronics;2005-01
4. Time-Resolved Photoluminescence Spectra of Si Species Encapsulated in Zeolite Supercages;The Journal of Physical Chemistry B;2004-12-07
5. Site-dependent structural instability at the surroundings of theSi–Hbond in hydrogenated amorphous silicon based wide-gap alloys;Physical Review B;2004-06-22
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