Site-dependent structural instability at the surroundings of theSi–Hbond in hydrogenated amorphous silicon based wide-gap alloys
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.69.245203/fulltext
Reference19 articles.
1. Reversible conductivity changes in discharge‐produced amorphous Si
2. Photoinduced structural instability around the Si-H bond in undoped hydrogenated amorphous silicon
3. Elastic properties, intrinsic and photoinduced stress in hydrogenated amorphous-silicon thin films with different hydrogen content
4. The light-induced metastable lattice expansion in hydrogenated amorphous silicon
5. Photoinduced stress in hydrogenated amorphous silicon films
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Two characteristic photoluminescence states and their metastability in hydrogenated amorphous silicon and its alloys;Journal of Applied Physics;2007-03
2. Light-induced anelastic change in a-Si(H);Materials Science and Engineering: A;2006-12
3. Two characteristic photoluminescence states in a-Si:H and its alloys;Journal of Non-Crystalline Solids;2006-06
4. Photoinduced structural instability in a hydrogenated amorphous silicon-germanium alloy with high structural inhomogeneity;Physical Review B;2005-04-14
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