Time-of-flight and post-transit spectroscopy of a-Si1 − xCx:H alloys
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Hole drift mobility measurements in amorphous silicon‐carbon alloys
2. Study of the temperature and field dependence of electron drift mobility in α-Si1−χCχ:H using the time-of-flight technique
3. Proc. of the 7th Int. School in Condensed Matter Phys.;Kočka,1993
4. Transient space‐charge‐limited currents: The time‐of‐flight and post‐transit analysis in hydrogenated amorphous silicon
5. Proc. of the 8th Int. School in Condensed Matter Phys.;Juška,1994
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1. High resolution density of states spectroscopy in semiconductors by exact post-transit current analysis;Journal of Applied Physics;2000-07-15
2. Experimental evidence for long-range potential fluctuations in a-Se films;Journal of Non-Crystalline Solids;2000-05
3. Improved High Resolution Post-Transit Spectroscopy for Determining the Density of States in Amorphous Semiconductors;MRS Proceedings;2000
4. Distribution of gap states in amorphous selenium thin films;Physical Review B;1999-04-15
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