Study of the temperature and field dependence of electron drift mobility in α-Si1−χCχ:H using the time-of-flight technique-Reference-Cited by-同舟云学术

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Study of the temperature and field dependence of electron drift mobility in α-Si1−χCχ:H using the time-of-flight technique

Published:1993-12 Issue: Volume:164-166 Page:521-524
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Bayley P.A.,Browne A.K.,Marshall J.M.,Van Swaaij R.A.C.M.M.,Hepburn A.R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Electronic and Optoelectronic Materials for the 21st Century;Adriaenssens,1993

2. presented at the 11th European PVSEC conference;Von Der Linden,1992

3. Calculation of localized-state energy distributions from transient-photoresponse data

4. Electronic and Optoelectronic Materials for the 21st Century;Van Swaaij,1993

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Time-of-flight and post-transit spectroscopy of a-Si1 − xCx:H alloys;Journal of Non-Crystalline Solids;1996-05

2. Transient photoconductivity in a-Si1−x C x :H thin films;Philosophical Magazine B;1996-03

3. Determination of the Density of States in a-SiC:H from Transient Photoconductivity;MRS Proceedings;1996

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