Transient photoconductivity in a-Si1−x C x :H thin films

Author:

Bayley P. A.1,Marshall J. M.1

Affiliation:

1. a Electronic Materials Centre, Department of Materials Engineering , University of Wales Swansea , Singleton Park, Swansea , SA2 8PP , UK

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Reference27 articles.

1. Adriaenssens , G. J. and Öktü , Ö. Electronic and Optoelectronic Materials for the 21st Century, Proceedings of the 7th International School on Condensed Matter Physics. Edited by: Marshall , J. M. Kirov , N. and Vavrek , A. pp.169Singapore: World Scientific.

2. Study of the temperature and field dependence of electron drift mobility in α-Si1−χCχ:H using the time-of-flight technique

3. Bayley , P. A. Marshall , J. M. Hepburn , A. R. Van Swaaij , R. A. C. M. M. and Bezemer , J. Electronic Optoelectronic and Magnetic Thin Films—Science and Technology, Proceedings of the 8th International School on Condensed Matter Physics. Edited by: Marshall , J. M. Kirov , N. and Vavrek , A. pp.440Taunton, UK: Research Studies Press.

4. Transport properties of glow-discharge amorphous silicon grown under different deposition conditions

5. An amorphous SiC thin film visible light-emitting diode with a μc-SiC:H electron injector

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