Transient space‐charge‐limited currents: The time‐of‐flight and post‐transit analysis in hydrogenated amorphous silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111387
Reference11 articles.
1. Photocurrent Transient Spectroscopy: Measurement of the Density of Localized States ina-As2Se3
2. Transient conductivity and photoconductivity ina-Si:H
3. The study of transport and related properties of amorphous silicon by transient experiments
4. Calculation of localized-state energy distributions from transient-photoresponse data
5. Transient space charge limited currents in a-Si:H
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1. Ultrafast Charge Carrier Recombination in a-Si:H and μc-Si:H;physica status solidi (a);1999-02
2. Peculiarities of Space-Charge-Limited Photocurrent;Acta Physica Polonica A;1997-11
3. Time-of-flight and post-transit spectroscopy of a-Si1 − xCx:H alloys;Journal of Non-Crystalline Solids;1996-05
4. Identification and explanation of peculiar features in hole SCLC-TOF in a-Si:H pin-diodes from numerical modelling;Journal of Non-Crystalline Solids;1996-05
5. Comments on space-charge-limited time-of-flight measurements in post-transit mode, applied to a-Si:H based solar cells;Journal of Non-Crystalline Solids;1996-05
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