Dielectric functions of thin interface layers in a-Si:H-based device structures by spectroscopic ellipsometry
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference4 articles.
1. An ellipsometry study of a hydrogenated amorphous silicon basedn‐istructure
2. Influence of the substrate on the early stage of the growth of hydrogenated amorphous silicon evidenced by kinetic ellipsometry
3. A real time ellipsometry study of the growth of amorphous silicon on transparent conducting oxides
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1. Optical metrology of thin film solar cells from 0.2 to 30 µm;2010 35th IEEE Photovoltaic Specialists Conference;2010-06
2. Growth of a-Si:H on transparent conductive oxides for solar cell applications;Solar Energy Materials and Solar Cells;1996-06
3. Characterisation of thin amorphous silicon films with multiple internal reflectance spectroscopy;Journal of Non-Crystalline Solids;1996-05
4. CO2 plasma treatment of tin oxides;Applied Surface Science;1996-04
5. Characterization of thin amorphous silicon films with multiple internal reflectance spectroscopy;Journal of Applied Physics;1995-12-15
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