Influence of the substrate on the early stage of the growth of hydrogenated amorphous silicon evidenced by kinetic ellipsometry
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.340247
Reference17 articles.
1. Insituinvestigation of the growth of rf glow‐discharge deposited amorphous germanium and silicon films
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3. Auger electron and x‐ray photoelectron spectroscopy analysis of the hydrogenated amorphous silicon‐tin oxide interface: Evidence of a plasma‐induced reaction
4. Applications of SIMS, SAES and XPS to problems in the semiconductor industry
5. X‐ray photoelectron spectroscopy study of hydrogen plasma interactions with a tin oxide surface
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