Capacitance studies of optical and thermal transitions from mobility gap states in hydrogenated amorphous silicon
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. Direct Measurement of the Bulk Density of Gap States inn-Type Hydrogenated Amorphous Silicon
2. Resolution of the a-Si:H DLTS energy scale controversy
3. Gap states in phosphorus-doped amorphous silicon studied by isothermal capacitance transient spectroscopy
4. Identification of the Dangling-Bond State within the Mobility Gap ofa-Si: H by Depletion-Width-Modulated ESR Spectroscopy
5. The density of states in undoped and doped amorphous hydrogenated silicon
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1. Phototransport in a-Si:H at high electric fields;Journal of Non-Crystalline Solids;1992-01
2. Thermodynamical equilibrium gap-state distribution in undoped a-Si: H;Philosophical Magazine B;1991-10
3. Nature of deep defects in bulk VHF-GD a-Si:H;Journal of Non-Crystalline Solids;1991-01
4. Gap density of states in amorphous silicon‐germanium alloy: Influence on photothermal deflection spectroscopy and steady‐state conductivity measurements;Journal of Applied Physics;1990-01-15
5. Non-radiative recombination at dangling bonds in a-Si:H;Journal of Non-Crystalline Solids;1989-12
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