Direct Measurement of the Bulk Density of Gap States inn-Type Hydrogenated Amorphous Silicon
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.45.197/fulltext
Reference10 articles.
1. Investigation of the density of localized states in a-Si using the field effect technique
2. Electronic density of states in discharge‐produced amorphous silicon
3. A DLTS study of the gap states of amorphous Si1−xHx alloys
4. Optically induced electron spin resonance in doped amorphous silicon
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