Gap states in phosphorus-doped amorphous silicon studied by isothermal capacitance transient spectroscopy-Reference-Cited by-同舟云学术

Gap states in phosphorus-doped amorphous silicon studied by isothermal capacitance transient spectroscopy

Published:1985-07 Issue:1 Volume:52 Page:33-57
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Okushi Hideyo¹

Affiliation:

1. a Electrotechnical Laboratory , 1-1-4 Umezono, Sakura-Mura, Ibaraki , 305 , Japan

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642818508243164

Reference34 articles.

1. Density of gap-states in N-type and P-type A-Si:H

2. Identification of the Dangling-Bond State within the Mobility Gap ofa-Si: H by Depletion-Width-Modulated ESR Spectroscopy

3. Emin , D. 1973. “Electronic and Structural Properties of Amorphous Semiconductors”. Edited by: Le Comber , P. G. and Mort , J. 261–328. London, New York: Academic Press.

4. Analysis of field-effect and capacitance–voltage measurements in amorphous semiconductors

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