Demonstration of space-charge-limited time of flight as a new tool for characterization of real a-Si:H solar cells-Reference-Cited by-同舟云学术

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Demonstration of space-charge-limited time of flight as a new tool for characterization of real a-Si:H solar cells

Published:1993-12 Issue: Volume:164-166 Page:489-492
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Kočka J.,Juška G.,Klíma O.,Šípek E.,Nobile G.,Terzini E.,Conte G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. O. Klíma, O. Štika, Ho The Ha, S.A.Hamied, J. Stuchlík and J. Kočka, this conference.

2. Thermal generation currents in hydrogenated amorphous siliconp‐i‐nstructures

3. Saturation and recovery kinetics of current-induced defects in a-Si:H

4. SCLC transients in a-Si:H — New features and possibilities

5. a-Si:H electron drift mobility measured under extremely high electric field

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-temperature admittance measurement in thin film amorphous silicon structures;Journal of Applied Physics;1997-07-15

2. Comments on space-charge-limited time-of-flight measurements in post-transit mode, applied to a-Si:H based solar cells;Journal of Non-Crystalline Solids;1996-05

3. Space-charge-limited photocurrent transients: The influence of bimolecular recombination;Physical Review B;1995-06-15

4. Transient space‐charge‐limited currents: The time‐of‐flight and post‐transit analysis in hydrogenated amorphous silicon;Applied Physics Letters;1994-05-30

5. The Time-of-Flight Technique Applied to Amorphous Silicon Pin Solar Cells;MRS Proceedings;1994

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