Comments on space-charge-limited time-of-flight measurements in post-transit mode, applied to a-Si:H based solar cells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. SCLC transients in a-Si:H — New features and possibilities
2. New features in space-charge-limited-photocurrent transients
3. Demonstration of space-charge-limited time of flight as a new tool for characterization of real a-Si:H solar cells
4. Post-transit time-of-flight currents as a probe of the density of states in hydrogenated amorphous silicon
5. Transient space‐charge‐limited currents: The time‐of‐flight and post‐transit analysis in hydrogenated amorphous silicon
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1. Analysis of Post-Transit Photocurrent-Time Data by Application of Tikhonov Regularization;MRS Proceedings;2002
2. High resolution density of states spectroscopy in semiconductors by exact post-transit current analysis;Journal of Applied Physics;2000-07-15
3. Experimental evidence for long-range potential fluctuations in a-Se films;Journal of Non-Crystalline Solids;2000-05
4. Improved High Resolution Post-Transit Spectroscopy for Determining the Density of States in Amorphous Semiconductors;MRS Proceedings;2000
5. Distribution of gap states in amorphous selenium thin films;Physical Review B;1999-04-15
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