Temperature dependence of photo-induced absorption in several a-Si:H samples with different hydrogen content
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference5 articles.
1. Photomodulation spectroscopy of dangling bonds in doped and undoped a-Si:H
2. Transient-photomodulation-spectroscopy studies of carrier thermalization and recombination ina-Si:H
3. Optical modulation spectroscopy in a-Si:H at room temperature
4. W. Grevendonk, M. Verluyten, J. Dauwen, G.J. Adriaenssens and J. Bezemer, Phil. Mag. B (in press).
5. Level of dangling-bond centres in a-Si: H
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1. Real-time modulation of Si-H vibration in hydrogenated amorphous silicon;Physical Review B;1999-12-15
2. Relation between the optoelectronic parameters of amorphous hydrogenated silicon films deposited at high temperatures and their microstructure;Semiconductors;1998-01
3. Comparison of steady-state optical modulation spectra of B2H6-doped and B(CH3)3-doped a-Si(:C):H films;Journal of Non-Crystalline Solids;1997-03
4. Structure and Electronic Parameters of A-Si:H Deposited by DC-MASD;MRS Proceedings;1997
5. Density of Localized States in the Gap of Non-Crystalline Semiconductors;Physics and Applications of Non-Crystalline Semiconductors in Optoelectronics;1997
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