Relation between the optoelectronic parameters of amorphous hydrogenated silicon films deposited at high temperatures and their microstructure-Reference-Cited by-同舟云学术

Relation between the optoelectronic parameters of amorphous hydrogenated silicon films deposited at high temperatures and their microstructure

Published:1998-01 Issue:1 Volume:32 Page:109-111
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Adriaenssens G. J.,Grevendonk W.,Golikova O. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187372.pdf

Reference15 articles.

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2. O. A. Golikova, A. N. Kuznetsov, V. Kh. Kudoyarova, M. M. Kazanin, and A. I. Kosarev, Mater. Res. Soc. Symp. Proc. 420, 353 (1996).

3. O. A. Golikova, A. N. Kuznetsov, V. Kh. Kudoyarova, and M. M. Kazanin, Fiz. Tekh. Poluprovodn. 31, 816 (1997) [Semiconductors 31, 691 (1997).

4. M. S. Bresler, O. B. Gusev, V. Kh. Kudoyarova, A. N. Kuznetsov, P. E. Pak, E. I. Terukov, I. N. Yassievich, B. A. Zakharchenya, W. Fuhs, and A. Sturm, Appl. Phys. Lett. 67, 3599 (1995).

5. V. Kh. Kudoyarova, N. A. Rogachev, J. T. Ishakov, E. I. Terukov, and E. P. Milichevich, Proceedings of the Thirteenth European Photovoltaic Solar Energy Conference (Nice, France, 1995), p. 165.

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