Room‐temperature photoluminescence of erbium‐doped hydrogenated amorphous silicon-Reference-Cited by-同舟云学术

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Room‐temperature photoluminescence of erbium‐doped hydrogenated amorphous silicon

Published:1995-12-11 Issue:24 Volume:67 Page:3599-3601
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bresler M. S.,Gusev O. B.,Kudoyarova V. Kh.,Kuznetsov A. N.,Pak P. E.,Terukov E. I.,Yassievich I. N.,Zakharchenya B. P.,Fuhs W.,Sturm A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.115330

Reference9 articles.

Cited by 108 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. (Invited)Excitation Mechanism of Rare Earth Ions in Nanostructured Silicon Rich Hosts;ECS Transactions;2018-04-05

2. Photoluminescence of rare earth ions (Er3+, Yb3+) in a porous silicon matrix;Thin Solid Films;2014-07

3. Enhancement of 1536nm emission of Er doped ZnO nanopowder by Ag doping;Optical Materials;2014-06

4. Ambient erbium luminescence in silicon and silicon-germanium films;Emerging Materials Research;2012-02

5. Erbium doping effects on the conduction band edge in germanium nanocrystals;Applied Physics Letters;2011-05-16

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