Analysis of SCLC curves in a-Si:H by a new direct method
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. Analysis of SCLC curves by a new direct method
2. LPCVD amorphous silicon;Manfredotti,1984
3. Least structure solution of photonuclear yield functions
4. The density of states in amorphous silicon determined by space-charge-limited current measurements
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Determination of bulk and interface density of states in polycrystalline silicon thin film transistors;Thin Solid Films;2007-07
2. Density of States in a-Si:H from SCLC and Its Application in Modeling a Vertical TFT;MRS Proceedings;2001
3. Modeling of the I–V characteristics in amorphous silicon n+-i-n+ devices;Journal of Applied Physics;2000-11
4. Determination of the density of states at the Fermi level of hydrogenated amorphous silicon in thin‐film transistor structure by space charge limited current measurement;Applied Physics Letters;1993-08-09
5. Density-of-States Distribution In Disilane LPCVD Deposited Amorphous Silicon as Determinated By SCLC;MRS Proceedings;1986
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