Modeling of the I–V characteristics in amorphous silicon n+-i-n+ devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1314309
Reference20 articles.
1. Space-Charge-Limited Currents in Solids
2. Determination of the bulk density of states in a-Si:H by steady-state SCLC
3. An exact evaluation of steady-state space-charge-limited currents for arbitrary trap distributions
4. Space‐charge‐limited currents: Refinements in analysis and applications toa‐Si1−xGex: H alloys
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