Determination of bulk and interface density of states in polycrystalline silicon thin film transistors-Reference-Cited by-同舟云学术

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Determination of bulk and interface density of states in polycrystalline silicon thin film transistors

Published:2007-07 Issue:19 Volume:515 Page:7581-7584
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Arpatzanis N.,Dimitriadis C.A.,Siskos S.,Hatzopoulos A.A.,Kamarinos G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. The density of states in amorphous silicon determined by space-charge-limited current measurements

2. Analysis of SCLC curves in a-Si:H by a new direct method

3. Evidence of carrier number fluctuation as origin of 1/f noise in polycrystalline silicon thin film transistors

4. Excimer laser annealing of amorphous and solid-phase-crystallized silicon films

5. Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantitative analysis of charge trapping and classification of sub-gap states in MoS2 TFT by pulse I–V method;Nanotechnology;2018-03-02

2. Separate Extraction of Densities of Interface and Bulk Trap States in High-Mobility ZnON Thin-Film Transistors;Journal of Nanoelectronics and Optoelectronics;2017-11-01

3. Extraction of bulk and interface trap densities in amorphous InGaZnO thin-film transistors;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-11

4. $\hbox{1}/f$ Noise Characterization of n- and p-Type Polycrystalline-Silicon Thin-Film Transistors;IEEE Transactions on Device and Materials Reliability;2009-09

5. A numerical analysis of the electrical characteristics of small-grains poly-Si TFTs;The European Physical Journal Applied Physics;2009-07-21

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