Defects and recombination in a-Si:1−xGex:H
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference25 articles.
1. Defect states in a-Si1−xGex:H studied by electron spin resonance
2. The role of dangling bonds in the transport and recombination of a-Si:Ge: H alloys
3. Improvement of photoconductive response in amorphous silicon-germanium alloys produced from fluorides instead of hydrides
4. Hydrogen evolution from a-Si:C:H and a-Si:Ge:H alloys
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1. Deep defects and their electron-capture cross sections in polymorphous silicon-germanium thin films;Journal of Applied Physics;2005-08
2. Light-induced defects in hydrogenated amorphous silicon germanium alloys;Solar Energy Materials and Solar Cells;2003-07
3. Metastable Defects in the Amorphous Silicon-Germanium Alloys;MRS Proceedings;2003
4. Defect bands in a-Si–Ge:H alloys with low Ge content;Journal of Non-Crystalline Solids;2000-05
5. Amorphous Si1−x Gex:H is a Good Candidate for Efficient Solar Cells;World Renewable Energy Congress VI;2000
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