Deep valence-band trap defect conversion by light soaking of a-Si:H
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Hole carrier drift-mobility measurements in a-Si: H, and the shape of the valence-band tail
2. Gap-state distribution in n-type and p-type a-Si:H from optical absorption
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Comments on space-charge-limited time-of-flight measurements in post-transit mode, applied to a-Si:H based solar cells;Journal of Non-Crystalline Solids;1996-05
2. Comprehensive numerical simulation of defect density and temperature-dependent transport properties in hydrogenated amorphous silicon;Physical Review B;1995-11-15
3. Optical-bias effects in electron-drift measurements and defect relaxation ina-Si:H;Physical Review B;1993-09-15
4. Transient hole currents in hydrogenated amorphous silicon at low temperatures and high fields;Philosophical Magazine B;1993-03
5. Electron Transport and Conduction-Band-Tail States in a-Si:H Deposited with a Remote Hydrogen Plasma;MRS Proceedings;1993-01-01
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