Infrared analysis of a-Ge1−xNx:H
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. MIS structure GaAs–Ge3N4–Al
2. Interface characteristics of Ge3N4-(n-type) GaAs MIS devices
3. Band‐gap tailoring in amorphous germanium‐nitrogen compounds
4. Optical properties of non-stoichiometric germanium nitride compounds (a-GeNx)
5. Vibrational properties of amorphous Si-N and Ge-N alloys
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1. Spectroscopic study of nitrogen incorporation in Ge, Sb, and Te elemental systems: A step toward the understanding of nitrogen effect in phase-change materials;Journal of Applied Physics;2022-11-28
2. Effect of Nitrogen on the Amorphous Structure and Subthreshold Electrical Conduction of GeSeSb‐Based Ovonic Threshold Switching Thin Films;physica status solidi (RRL) – Rapid Research Letters;2019-11-26
3. Laser Interference Structuring of a-GeN for the Production of Optical Diffraction Gratings;MRS Proceedings;2003
4. Optical diffraction gratings produced by laser interference structuring of amorphous germanium–nitrogen alloys;Applied Physics Letters;2002-10-07
5. Structural changes induced by nitrogen in the a-Ge:H network;Journal of Applied Physics;1999-03-15
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