Effect of In content of the buffer layer on crystalline quality and electrical property of In0.82Ga0.18As/InP grown by LP-MOCVD
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference13 articles.
1. Extended wavelength InGaAs infrared (1.0–2.4 μm) detector arrays on SCIAMACHY for space-based spectrometry of the Earth atmosphere
2. In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate
3. Molecular beam epitaxial growth of lattice‐mismatched In0.77Ga0.23As on InP
4. Ga0.28In0.72As/Al0.28In0.72As 2 μm photodiode heterostructures prepared by atmospheric pressure MOCVD
5. Ga1−xInxAs/InAsyP1−y/InP photodiodes for the 1.6 to 2.4 μm spectral region grown by low pressure MOCVD
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3. TEM dislocations characterization of InxGa1−xAs/InP (100) (x=0.82) on mismatched InP substrate;Materials Letters;2013-09
4. Response Spectrum 0.9-2.65 μm of In0.82Ga0.18As Detectors by Two-Step Growth Technique;Advanced Materials Research;2012-12
5. Effect of buffer layer annealing temperature on the crystalline quality of In0.82Ga0.18As layers grown by two-step growth method;Journal of Alloys and Compounds;2011-06
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