Author:
Midili V.,Nodjiadjim V.,Johansen T.K.,Squartecchia M.,Riet M.,Dupuy J.Y.,Konczykowska A.
Reference29 articles.
1. M. Urteaga, R. Pierson, P. Rowell, V. Jain, E. Lobisser, M. J. W. Rodwell, 130nm InP DHBTs with ft>0.52THz and fmax>1.1THz, IEEE Proceedings of the 69th Device Research Conference, Jun. 2011 pp. 281–282.
2. Type-II InP/GaAsSb double-heterojunction bipolar transistors with fmax>700GHz;Flückiger;Appl. Phys. Exp.,2014
3. InP/InGaAs double heterojunction bipolar transistors with BVCE0=12V and fmax=470GHz;Kashio;Electron. Lett.,2015
4. A 95-GHz InP HEMT MMIC Amplifier with 427-mW Power Output;Chen;IEEE Microw. Guide. Waves Lett.,1998
5. A. Margomenos, A. Kurdoghlian, M. Micovic, K. Shinohara, D.F. Brown, A.L. Corrion, H.P. Moyer, S. Burnham, D.C. Regan, R.M. Grabar, C. McGuire, M.D. Wetzel, R. Bowen, P.S. Chen, H.Y Tai, A. Schmitz, H. Fung, A. Fung, D.H. Chow, GaN Technology for E, W and G-band Applications, IEEE Compound Semiconductor Integrated Circuit Symposium - Technical digest, 2014.
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献