Design and Development of InP DHBTs With High Breakdown Voltage for Ka-Band PA Applications
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Published:2019-11
Issue:4
Volume:32
Page:506-512
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ISSN:0894-6507
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Container-title:IEEE Transactions on Semiconductor Manufacturing
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language:
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Short-container-title:IEEE Trans. Semicond. Manufact.
Author:
Mohata DheerajORCID,
Yang Yuefei,
Rasbot David,
Soligo Ricardo,
Wang David,
Bayruns Robert,
Bayruns John,
Osika David,
Brand JosephORCID
Funder
Global Communication Semiconductors Manufacturing Group for the Device Fabrication and Testing
Computer Aided Design Group for the Chip Layout
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials