Type-II InP/GaAsSb double-heterojunction bipolar transistors withfMAX> 700 GHz
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/7/i=3/a=034105/pdf
Reference16 articles.
1. Ultrahigh Performance Staggered Lineup (“Type-II”) InP/GaAsSb/InP NpN Double Heterojunction Bipolar Transistors
2. 600 GHz InP/GaAsSb/InP DHBTs Grown by MOCVD with a Ga(As,Sb) Graded-Base and fT x BVCEO ≫ 2.5 THz-V at Room Temperature
3. InP/GaAsSb DHBTs With 500-GHz Maximum Oscillation Frequency
4. InP/GaAsSb DHBTs With Simultaneous $f_{\rm T}/f_{\rm MAX}=428/621~{\rm GHz}$
5. Reduction of base-collector capacitance by undercutting the collector and subcollector in GaInAs/InP DHBTs
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