Optimisation of lateral super-junction multi-gate MOSFET for high drive current and low specific on-resistance in sub-100 V applications-Reference-Cited by-同舟云学术

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Optimisation of lateral super-junction multi-gate MOSFET for high drive current and low specific on-resistance in sub-100 V applications

Published:2018-11 Issue: Volume:81 Page:94-100
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Adenekan Olujide^ORCID,Holland Paul,Kalna Karol

Publisher

Elsevier BV

Subject

General Engineering

Reference26 articles.

1. State-of-the-art technologies and devices for high-voltage integrated circuits;Udrea;IET Circuits, Devices Syst.,2007

2. Theory of semiconductor superjunction devices;Fujihira;Jpn. J. Appl. Phys.,1997

3. SJ-FINFET: A new low voltage lateral superjunction MOSFET;Onishi,2008

4. Process design of superjunction MOSFETs for high drain current capability and low on-resistance;Saito,2017

5. Atlas User's Manual;Silvaco,2016

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A novel LDMOS with optimized electric field distribution to eliminate substrate assisted depletion effect;Microelectronics Journal;2022-10

2. Feasibility Study of Tuning the Threshold Voltage of Nanoscale Fin-shaped Field Effect Transistor (FinFET) via Metal Gate Workfunction Engineering;Silicon;2021-11-06

3. Improved Deep Trench Super-junction LDMOS Breakdown Voltage By Shielded Silicon-Insulator-Silicon Capacitor;Silicon;2020-10-22

4. Design novel structure of high-voltage MOSFET with double trench gates;Microelectronics Journal;2019-10

5. Scaling and optimisation of lateral super-junction multi-gate MOSFET for high drive current and low specific on-resistance in sub–50 V applications;Microelectronics Reliability;2019-08

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