Feasibility Study of Tuning the Threshold Voltage of Nanoscale Fin-shaped Field Effect Transistor (FinFET) via Metal Gate Workfunction Engineering
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01494-6.pdf
Reference24 articles.
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3. Narendar V, Narware P, Bheemudu V, Sunitha B (2020) Investigation of Short Channel Effects (SCEs) and Analog/RF Figure of Merits (FOMs) of Dual-Material Bottom-Spacer Ground-Plane(DMBSGP) FinFET. Silicon 12(10):2283–2291
4. Jha S, Choudhary SK (2020) A comparative analysis of the short-channel effects of double-gate, tri-gate and gate-all-around MOSFETs. Int J Nanopart 12(1–2):112–121
5. Adenekan O, Holland P, Kalna K (2018) Optimisation of lateral super-junction multi-gate MOSFET for high drive current and low specific on-resistance in sub-100 V applications. Microelectron J 81:94–100
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Simulation and comparison of current-voltage (IV) characteristics in changing the channel dimensions for nanoscale SiO2 and TiO2 based pi-gate FinFET;AIP Conference Proceedings;2024
2. Simulation and comparison of current-voltage (IV) characteristics in changing the channel dimensions for nanoscale SiO2 and TiO2 based Pi-gate FinFET;AIP Conference Proceedings;2024
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