Author:
Wu Lijuan,Ding Qilin,Chen Jiaqi
Funder
This work was supported by Scientific Research Fund of Hunan Provincial Education Department
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Coe DJ (1988) High voltage semiconductor device [P]. U.S. Patent 4 754 310
2. Chen XB (1993) Semiconductor power devices with alternating conductivity type high voltage breakdown region [P]. U.S. Patent 5 216 275
3. Olujide Adenekan P, Holland K, Kalna (2018) Optimisation of lateral super-junction multi-gate MOSFET for high drive current and low specific on-resistance in sub-100 V applications. Microelectron J 81:94–100
4. Yi B, Chen X (2016) A 300-V ultra-low-specific on-resistance high-side p-LDMOS with auto-biased n-LDMOS for SPIC. IEEE Trans Power Electron 32(1):551–560
5. Williams RK, Darwish MN, Blanchard RA, Siemieniec R, Rutter P, Kawaguchi Y (2017) The trench power MOSFET: Part I—history, technology, and prospects. IEEE Trans Electron Devices 64(3):674–691
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献