Optical matrix elements in tight-binding approach of hydrogenated Si nanowires
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference10 articles.
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2. The effect of shifting of the absorption edge in the silicon nanowire;Journal of Contemporary Physics (Armenian Academy of Sciences);2016-10
3. Double-gated Si NW FET sensors: Low-frequency noise and photoelectric properties;Journal of Applied Physics;2016-08-14
4. The Electron-Hole Interactions in Si Hydrogenate Nanocrystals: Tight-Binding Theory;Advanced Materials Research;2015-12
5. Effect of material properties on the accuracy of antiresonant approximation: Linear and second-order optical responses;Physical Review B;2014-07-29
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