Cylindrical surrounding-gate MOSFETs with electrically induced source/drain extension
Author:
Funder
National Nature Science Foundation of China
Publisher
Elsevier BV
Subject
General Engineering
Reference26 articles.
1. 25nm CMOS design considerations;Taur,1998
2. Analytic charge model for surrounding-gate MOSFETs;Yu;IEEE Trans. Electron. Devices,2007
3. A charge-based model for long-channel cylindrical surrounding-gate MOSFETs from intrinsic channel to heavily doped body;Liu;IEEE Trans. Electron. Devices,2008
4. An analytical drain current model for graded channel cylindrical/surrounding gate MOSFET;Kaur;Microelectron. J.,2007
5. Recessed source concept in nanoscale vertical surrounding gate (VSG) MOSFETs for controlling short-channel effects;Subrahmanyam;Physica E,2009
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