Piezoelectric models for semiconductor quantum dots
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference5 articles.
1. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
2. Electromechanical coupling in free-standing AlGaN/GaN planar structures
3. Calculation of electric field and optical transitions in InGaN∕GaN quantum wells
4. Dynamic coupling of piezoelectric effects, spontaneous polarization, and strain in lattice-mismatched semiconductor quantum-well heterostructures
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1. State of the Art of Continuous and Atomistic Modeling of Electromechanical Properties of Semiconductor Quantum Dots;Nanomaterials;2023-06-07
2. Effect of piezoelectric constants in electronic structures of InGaN quantum dots;Semiconductor Science and Technology;2013-07-31
3. A general perturbation method for inhomogeneities in anisotropic and piezoelectric solids with applications to quantum-dot nanostructures;International Journal of Solids and Structures;2011-03
4. Fully coupled piezoelectric models on the optical properties of InGaN quantum dots;Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VIII;2011-02-10
5. Electromechanical phenomena in semiconductor nanostructures;Journal of Applied Physics;2011-02
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