Effect of piezoelectric constants in electronic structures of InGaN quantum dots
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/28/i=10/a=105006/pdf
Reference28 articles.
1. Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes
2. A UV Light-Emitting Diode Incorporating GaN Quantum Dots
3. Ultraviolet light-emitting diodes with self-assembled InGaN quantum dots
4. The influence of a capping layer on optical properties of self-assembled InGaN quantum dots
5. Effect of InGaN quantum dot size on the recombination process in light-emitting diodes
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4. Non-Polar Wurtzite (1120) GaN/AlN Quantum Dots for Highly Efficient Opto-Electronic Devices;Electronics;2020-08-05
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