The influence of a capping layer on optical properties of self-assembled InGaN quantum dots
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2737971
Reference25 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
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1. Surface morphology and optical properties of InGaN quantum dots with varying growth interruption time;Materials Research Express;2019-12-09
2. Improving the internal quantum efficiency of green InGaN quantum dots through coupled InGaN/GaN quantum well and quantum dot structure;Applied Physics Express;2015-08-17
3. InGaN quantum dot green light-emitting diodes with negligible blue shift of electroluminescence peak wavelength;Applied Physics Express;2014-01-23
4. Green and Red Light-Emitting Diodes Based on Multilayer InGaN/GaN Dots Grown by Growth Interruption Method;Japanese Journal of Applied Physics;2013-08-01
5. Effect of piezoelectric constants in electronic structures of InGaN quantum dots;Semiconductor Science and Technology;2013-07-31
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