An improved read-assist energy efficient single ended P-P-N based 10T SRAM cell for wireless sensor network

Author:

Sanvale Prachi,Gupta Neha,Neema Vaibhav,Shah Ambika Prasad,Vishvakarma Santosh Kumar

Funder

Science and Engineering Research Board

Department of Science and Technology

Publisher

Elsevier BV

Subject

General Engineering

Reference24 articles.

1. Ultra-low power high stability 8T SRAM for application in object tracking system;Singh;IEEE Access,2018

2. Variability in nanometer technologies and impact on SRAM;Abu-Rahma,2013

3. A dynamic voltage scaled microprocessor system;Burd;IEEE J. Solid State Circuits,2000

4. Optimal supply and threshold scaling for subthreshold CMOS circuits;Wang,2002

5. Application of source biasing technique for energy efficient DECODER circuit design: memory array application;Gupta;J. Semicond.,2018

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1. A FinFET-based low-power, stable 8T SRAM cell with high yield;AEU - International Journal of Electronics and Communications;2024-02

2. Design of highly stable, high speed and low power 10T SRAM cell in 18-nm FinFET technology;Engineering Research Express;2023-09-01

3. Analyzing the Performance of 6T SRAM Cell and 64×64 Memory Array at Lower Technology Nodes for Low Power Design;2023 1st International Conference on Circuits, Power and Intelligent Systems (CCPIS);2023-09-01

4. A low-power SRAM design with enhanced stability and ION/IOFF ratio in FinFET technology for wearable device applications;International Journal of Electronics;2023-07-25

5. 10T SRAM cell Analysis for improved Read and Write Noise Margin;2023 14th International Conference on Computing Communication and Networking Technologies (ICCCNT);2023-07-06

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