Ultra-Low Power High Stability 8T SRAM for Application in Object Tracking System
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
General Engineering,General Materials Science,General Computer Science
Link
http://xplorestaging.ieee.org/ielx7/6287639/8274985/08240882.pdf?arnumber=8240882
Cited by 23 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A novel single-ended 9T SRAM cell with write assist and decoupled read path for efficient low-voltage applications;International Journal of Information Technology;2024-05-10
2. Design of Enhanced Reversible 9T SRAM Design for the Reduction in Sub-threshold Leakage Current with14nm FinFET Technology;ACM Transactions on Design Automation of Electronic Systems;2023-10-28
3. A low power single bit-line configuration dependent 7T SRAM bit cell with process-variation-tolerant enhanced read performance;Analog Integrated Circuits and Signal Processing;2023-02-03
4. Impact of High-Performance Transistor on Performance of Static Random Access Memory for Low-Voltage Applications;Proceedings of Second International Conference on Computational Electronics for Wireless Communications;2023
5. Design of Various SRAM Attainment for FINFET;Computer Networks and Inventive Communication Technologies;2022-10-14
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