On the assessment of few design proposals for 4H-SiC BJTs
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference29 articles.
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1. Static and Dynamic Performance Prediction of Ultrahigh-Voltage Silicon Carbide Insulated-Gate Bipolar Transistors;IEEE Transactions on Power Electronics;2021-05
2. High-k dielectrics for 4H-silicon carbide: present status and future perspectives;Journal of Materials Chemistry C;2021
3. Modelling the static on-state current voltage characteristics for a 10 kV 4H–SiC PiN diode;Materials Science in Semiconductor Processing;2020-08
4. Low Turn-Off Loss 4H-SiC Insulated Gate Bipolar Transistor With a Trench Heterojunction Collector;IEEE Journal of the Electron Devices Society;2020
5. Anisotropic hole drift velocity in 4H-SiC;Materials Science and Engineering: B;2019-10
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