Static and Dynamic Performance Prediction of Ultrahigh-Voltage Silicon Carbide Insulated-Gate Bipolar Transistors-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Static and Dynamic Performance Prediction of Ultrahigh-Voltage Silicon Carbide Insulated-Gate Bipolar Transistors

Published:2021-05 Issue:5 Volume:36 Page:5874-5891
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Johannesson Daniel^ORCID,Nawaz Muhammad,Norrga Staffan^ORCID,Hallen Anders^ORCID,Nee Hans-Peter^ORCID

Funder

SweGRIDS

Energimyndigheten

ABB Power Grids Research

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/9337250/09207967.pdf?arnumber=9207967

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Silicon Carbide n-IGBTs: Structure Optimization for Ruggedness Enhancement;IEEE Transactions on Industry Applications;2024-05

2. Enhanced marine predators algorithm optimized support vector machine for IGBT switching power loss estimation;Measurement Science and Technology;2023-10-26

3. Remaining useful life prediction for IGBT based on SO-Bi- ALSTM;2023 IEEE 9th International Conference on Cloud Computing and Intelligent Systems (CCIS);2023-08-12

4. A Novel 4H–SiC/Si Heterojunction IGBT Achieving Low Turn–Off Loss;Electronics;2023-06-01

5. Growth of 4H-SiC epitaxial layers at temperatures below 1500 °C using trichlorosilane (TCS);Journal of Crystal Growth;2023-06

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP