Author:
Vasconcelos Jackelinne L.,Rodrigues Clóves G.,Luzzi Roberto
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference47 articles.
1. Wide Bandgap Semiconductors;Takahashi,2006
2. Material science and device physics in SiC technology for high-voltage power devices;Kimoto;Jpn. J. Appl. Phys.,2015
3. SiC and GaN power semiconductor devices, Chapter 5;Gachovska,2018
4. Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices;Roccaforte;Microelectron. Eng.,2018
5. A comparative study on electrical characteristics of MOS (Si0.5Ge0.5) and MOS (4H-SiC) transistors in 130nm technology with BSIM3v3 model;Hebali;Int. J Adv. Comput. Electron. Eng.,2018
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